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SAM™ - Saturable Absorber Mirror λ = 3000 nm
• SAM information
• Cleaning a dirty SAM surface (pdf)
Part-No description: SAM-λ-A-τ-x
• λ - laser wavelength
• A - low intensity absorption
• τ - absorber relaxation time
• x - mounting options & price
Reverse design: Laser beam goes trough the GaAs substrate
• Wavelength λ = 2900 nm
• Absorptance A = 9 %
• Relaxation time τ = 10 ps
• Data sheet (pdf)
• Mounting & price table
• Only for gluing, not soldering
• Order form
• Wavelength λ = 3000 nm
• Absorptance A = 33 %
• Relaxation time τ = 10 ps
• Data sheet (pdf)
• Mounting & price table
• Order form
• Single chip, unmounted
• Chip area 4.0 mm x 4.0 mm
• Chip thickness 450 µm
• Data sheet (pdf)
• Price: 780.- €/pc
• Single chip, unmounted
• Chip area 1.0 mm x 1.0 mm
• Chip thickness 450 µm
• Data sheet (pdf)
• Price: 267.- €/pc
• Single chip, unmounted
• Chip area 1.3 mm x 1.3 mm
• Chip thickness 450 µm
• Data sheet (pdf)
• Price: 243.- €/pc
• Single chip, unmounted
• Chip area 2 mm x 2 mm
• Chip thickness 450 µm
• Data sheet (pdf)
• Price: 308.- €
• x = 4.0-12.7g-c / 4.0-12.7g-e
• Chip area 4.0 mm x 4.0 mm
• Glued on a copper heat sink with 12.7 mm diameter
• Center mounted : x = 4.0-12.7g-c
• Edge mounted : x = 4.0-12.7g-e
• Data sheet (pdf)
• Price: 855.- €/pc
• x = 4.0-25.0g-c / 4.0-25.0g-e
• Chip area 4.0 mm x 4.0 mm
• Glued on a copper heat sink with 25.0 mm diameter
• Center mounted : x = 4.0-25.0g-c
• Edge mounted : x = 4.0-25.0g-e
• Data sheet (pdf)
• Price: 855.- €/pc
• x = 4.0-25.4g-c / 4.0-25.4g-e
• Chip area 4.0 mm x 4.0 mm
• Glued on a copper heat sink with 25.4 mm diameter
• Center mounted : x = 4.0-25.4g-c
• Edge mounted : x = 4.0-25.4g-e
• Data sheet (pdf)
• Price: 855.- €/pc